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SuperSOT SOT23 NPN SILICON POWER (SWITCHING) TRANSISTORS
ISSUE 3 - NOVEMBER 1995 FEATURES
FMMT617 FMMT618 FMMT619 FMMT624 FMMT625
*
* * * * *
625mW POWER DISSIPATION
IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Voltage E.g. 8mV Typ. Extremely Low Equivalent On Resistance; RCE(sat) C B E
DEVICE TYPE FMMT617 FMMT618 FMMT619 FMMT624 FMMT625
COMPLEMENT FMMT717 FMMT718 FMMT720 FMMT723
PARTMARKING 617 618 619 624 625
RCE(sat) 50m at 3A 50m at 2A 75m at 2A -
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current** Continuous Collector Current Base Current Power Dissipation at Tamb=25C* SYMBOL VCBO VCEO VEBO ICM IC IB Ptot FMMT FMMT FMMT FMMT FMMT 617 618 619 624 625 15 15 5 12 3 20 20 5 6 2.5 50 50 5 6 2 500 625 -55 to +150 125 125 5 3 1 150 150 5 3 1 UNIT V V V A A mA mW C
Operating and Storage Temperature Tj:Tstg Range
* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm **Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for these devices
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FMMT618 FMMT619
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) 8 70 130 Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE 200 300 200 100 fT Cobo t(on) t(off) 100 0.89 0.79 400 450 360 180 140 23 170 400 30
FMMT618
MIN. 20 20 5 TYP. 100 27 8.3 100 100 100 15 150 200 1.0 1.0 200 300 200 100 100 50 50 5
FMMT619
TYP. 190 65 8.3 MAX.
MAX. MIN.
UNIT CONDITIONS. V V V nA nA nA nA nA mV mV mV mV V V V V IC=100A IC=10mA* IE=100A VCB=16V VCB=40V VEB=4V VCES=16V VCES=40V IC=0.1A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB=50mA* IC=2.5A, IB=50mA* IC=2A, IB=50mA* IC=2.5A, IB=50mA* IC=2A, VCE=2V* IC=2.5A, VCE=2V* IC=10mA, VCE=2V* IC=200mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=6A, VCE=2V* MHz IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz VCC=10V, IC=1A IB1=-IB2=10mA
100 100
100 10 125 150 0.87 0.80 400 450 400 225 40 165 12 170 750 20 20 200 220 1.0 1.0
Transition Frequency Output Capacitance Turn-On Time Turn-Off Time
pF ns ns
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
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FMMT619
TYPICAL CHARACTERISTICS
1
+25C
0.6 100m 0.4 10m
I+/I*=40
100C 25C -55C
I+/I*=100 I+/I*=50 I+/I*=10
0.2
1m 1m
10m
100m
1
10
0.0
1mA
10mA
100mA
1A
10A
IC - Collector Current (A)
Collector Current
VCE(sat) v IC
1.2 450
25C
VCE(SAT) vs IC
1.2 1.0 0.8 0.6 0.4 0.2
100C
V+-=2V
I+/I*=40
1.0 0.8 0.6
-55C 25C 100C
-55C
225
0.4 0.2
0.0 1mA
10mA
100mA
1A
0 10A
0.0 1mA
10mA
100mA
1A
10A
Collector Current
Collector Current
HFE vs IC
VBE(SAT) vs IC
10 SINGLE PULSE TEST Tamb= 25 deg C
1.0 0.8 0.6 0.4 0.2
V+-=2V
-55C
1.0
D.C. 1s 100ms 10ms 1ms 100s
25C
100C
0.1
0.0 1mA
10mA
100mA
1A
10A
0.01
0.1
1
10
100
Collector Current
VCE (VOLTS)
VBE(ON) vs IC
3 - 154
Safe Operating Area
FMMT617 FMMT624 FMMT618 FMMT625 FMMT619
SuperSOT Series
FMMT717 FMMT722 FMMT718 FMMT723 FMMT720
THERMAL CHARACTERISTICS AND DERATING INFORMATION
DERATING CURVE
MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate
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